DE 101 42 600 B4, DE 101 42 600 A1, US 6974655 B2, US 2003/0148219 A1, J. Rottstegge, C. Hohle, C. Eschbaumer, M. Sebald, W. D. Domke, Silicon resist for photolithography at short exposure wavelengths and process for making photoresists DE 101 37 109 A1, US 7052820 B2, US 2003/0108812 A1, J. Rottstegge, E. Kühn, W. Herbst, C. Eschbaumer, C. Hohle, M. Sebald, Silicon-containing resist for photolithography
DE 101 31 487 B4, DE 101 31 487 A1, US 6946236 B2, US 2003/0073037 A1, J. Rottstegge, E. Kühn, C. Eschbaumer, G. Falk, M. Sebald, Negative resist process with simultaneous development and aromatization of resist structures
DE 101 31 488 B4, DE 101 31 488 A1, US 2003/0068585 A1, J. Rottstegge, Chemical consolidation of photoresists in the UV range
DE 101 31 667 B4, DE 101 31 667 A1, US 6770423 B2, US 2003/0082488 A1, J. Rottstegge, E. Kühn, W. Herbst, C. Eschbaumer, C. Hohle, G. Falk, M. Sebald, Negative resist process with simultaneous development and silylation
DE 101 35 246 B4, DE 101 35 246 A1, US 7041426 B2, US 2003/0082480 A1, C. Eschbaumer, C. Hohle, M. Sebald, J. Rottstegge, Photoresist based on polycondensates and having an increased resolution for use in 157 nanometer lithography
DE 101 37 100 B4, DE 101 37 100 A1, US 6806027 B2, US 2003/0096190 A1, C. Hohle, J. Rottstegge, C. Eschbaumer, M. Sebald, Chemically amplified photoresist and process for structuring substituents using transparency enhancement of resist copolymers for 157 nm photolithography through the use of fluorinated cinnamic acid derivatives
DE 101 37 109 A1, US 7052820 B2, US 2003/0108812 A1, J. Rottstegge, E. Kühn, W. Herbst, C. Eschbaumer, C. Hohle, M. Sebald, Silicon-containing resist for photolithography
DE 101 53 497 B4, US 7045273 B2, DE 101 53 497 A1, US 2003/0124468 A1, J. Ferbitz, W. Mormann, J. Rottstegge, C. Hohle, C. Eschbaumer, M. Sebald, Process for silylating photoresists in the UV range
DE 102 03 838 B4, DE 102 03 838 A1, US 6835528 B2, US 2003/0157432 A1, J. Rottstegge, Fluorine-containing photoresist having reactive anchors for chemical amplification and improved copolymerization properties
DE 102 08 449 A1, US 7018784 B2, US 2004/0043330 A1, J. Rottstegge, W. Herbst, G. Falk, E. Kühn, Process for increasing the etch resistance and for reducing the hole and trench width of a photoresist structure using solvent systems of low polarity
DE 102 08 786 B4, DE 102 08 786 A1, US 6899997 B2, US 2003/0211422 A1, S. S. Yip, J. Rottstegge, E. C. Richter, G. Falk, M. Sebald, K. Seibold, M. Kern, Process for modifying resist structures and resist films from the aqueous phase
